发明名称 FIELD EFFECT TRANSISTOR TYPE MULTI-ION SENSOR AND PREPARATION THEREOF
摘要 PURPOSE:To form a plurality of responsive gates independently, by a method wherein a liquid prepared by dissolving ion responsive substance in a proper solvent along with a film matrix material is blown to a gate by an ink jet system to be repeatedly applied thereto in such a manner that the kind of the ion responsive substance is variously changed. CONSTITUTION:A first unit 21 has a gate 21 for a comparison electrode and said gate is coated with an org. polymer film not responsive to an ion. Each gates of other sensor units 23, 25, 27 are coated with ion selecting films respectively responsive to a different kind of ions. The coating of each ion selecting film is performed by such a method that liquid droplets 45 are intermittently blown out from a nozzle 44 and, after passed through charging electrodes 46, the charged liquid droplets are blown out between polarization electrodes 47. In general, voltage is applied to the charging electrodes 46 and the polarization electrodes 47 and the liquid droplets are guided to a gutter 48. By pulsewise cutting off voltage applied to the charging electrodes 46, the liquid droplets are guided to the objective gate on a substrate. A solvent is evaporated to form an ion selecting film.
申请公布号 JPS5924244(A) 申请公布日期 1984.02.07
申请号 JP19820133686 申请日期 1982.08.02
申请人 HITACHI SEISAKUSHO KK 发明人 MIYAGI HIROYUKI;MARUIZUMI TAKUYA;TAKADA YOSHITADA
分类号 G01N27/414 主分类号 G01N27/414
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