发明名称 |
Tristate transistor logic circuit with reduced power dissipation |
摘要 |
A power-down network is included in a tristate TTL circuit to reduce power dissipation in the high impedance third state while permitting high switching speeds during bistate operation of the circuit. The power-down circuit includes a power-down transistor connected in series between the collector resistor and collector of the phase splitter transistor. The base of the phase splitter transistor is connected through a diode to the disabling gate. A first resistor having a significantly higher value than the collector resistor is connected between the base of the power-down transistor and the VCC terminal. When the circuit is in the high impedance state, the power-down transistor is turned off to interrupt current flow through the collector resistor, and a relatively high impedance current path through the first resistor to the disabling gate is substitute for an otherwise relatively low impedance current path through the collector resistor.
|
申请公布号 |
US4430585(A) |
申请公布日期 |
1984.02.07 |
申请号 |
US19810335624 |
申请日期 |
1981.12.30 |
申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
KIRK, JR., EDWARD W. |
分类号 |
H03K19/088;H03K5/02;H03K19/082;H03K19/20;(IPC1-7):H03K19/08;H03K17/62 |
主分类号 |
H03K19/088 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|