发明名称 Tristate transistor logic circuit with reduced power dissipation
摘要 A power-down network is included in a tristate TTL circuit to reduce power dissipation in the high impedance third state while permitting high switching speeds during bistate operation of the circuit. The power-down circuit includes a power-down transistor connected in series between the collector resistor and collector of the phase splitter transistor. The base of the phase splitter transistor is connected through a diode to the disabling gate. A first resistor having a significantly higher value than the collector resistor is connected between the base of the power-down transistor and the VCC terminal. When the circuit is in the high impedance state, the power-down transistor is turned off to interrupt current flow through the collector resistor, and a relatively high impedance current path through the first resistor to the disabling gate is substitute for an otherwise relatively low impedance current path through the collector resistor.
申请公布号 US4430585(A) 申请公布日期 1984.02.07
申请号 US19810335624 申请日期 1981.12.30
申请人 BELL TELEPHONE LABORATORIES, INCORPORATED 发明人 KIRK, JR., EDWARD W.
分类号 H03K19/088;H03K5/02;H03K19/082;H03K19/20;(IPC1-7):H03K19/08;H03K17/62 主分类号 H03K19/088
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