发明名称 SPUTTERING DEVICE
摘要 PURPOSE:To enable the continuous formation of a thin film on a substrate surface without increasing the scale of a device, by segmenting the inside of a vacuum vessel wherein sputtering is accomplished through a film-like substrate into six chambers having the respective functions with separate evacuation pumps by means of slits. CONSTITUTION:The side wall on the front side of a vacuum vessel 1 is removed, and a film-like substrate P in un-coiled from a feed reel 65 and is passed through low conductance slits 15-21. The substrate P is at the same instant extended along the elements in respective chambers in order of the 1st auxiliary vacuum chamber 9, degassing chamber 10, high vacuum chamber 11, intermediate vacuum chamber 12, sputtering chamber 13 and the 2nd auxiliary vacuum chamber 14. The forward end thereof is wound on a take-up reel 66, then the side wall of the vessel 1 is installed. Vacuum pumps 57-62 are operated to evacuate the inside of the respective chambers and to maintain the same under prescribed pressure, whereafter the elements in the respective chambers are functioned. The substrate P formed with the thin sputtered film to a desired thickness is continuously taken up according to the above-mentioned device.
申请公布号 JPS5923871(A) 申请公布日期 1984.02.07
申请号 JP19820133581 申请日期 1982.07.30
申请人 TOKUDA SEISAKUSHO:KK 发明人 SHIODA TOMOSHIROU
分类号 C23C14/20;C23C14/56 主分类号 C23C14/20
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