| 摘要 |
PURPOSE:To uniformalize the temperature distribution within a wafer and to obtain a grown layer with no crystal defect by a method wherein resistivity of a heating holder is made different depending on locations, when the heating holder is heated by high frequency heating to grow an epitaxial layer on a semiconductor wafer placed on the holder within a reaction furnace into which reaction gas is introduced. CONSTITUTION:A reaction furnace 1 is placed on a surface support 2, and reaction gas is fed into the furnace 1 through a furnace gas inlet tube 3 projecting from the center of the support 2. Coil protection tubes 7 each housing therein a high frequency induction coil 6 are provided on both sides of the inlet tube 3. A heating holder 4 supported on a heating holder rotating tube 8 is disposed above the protection tube 7, and a semiconductor wafer 5 is placed thereon. With this arrangement, resistivity of the heating holder 4 mainly consisted of carbon is made not uniform, but gradient by adding impurities, e.g., boron, in a fashion that the resistivity is at maximum near the radial center and gradually decreased toward the inner and outer peripheral edges. By so doing, the penetration depth of high frequency into the holder 4 becomes uniform due to the skin effect, thereby uniformalizing temperature distribution within the wafer 5. |
