| 摘要 |
PURPOSE:To provide wirings of no stepwise disconnection through a connecting hole of a fine and sharp side by selectively allowing semiconductor or conductive substance to remain by anisotropic etching in the connecting hole of an insulating film on a semiconductor substrate or the first wirings. CONSTITUTION:A field insulating film 22, a polysilicon wirings 24 covered and insulated at 25 on the film 22, a gate oxidized film 26 covered on n<+> type layers 28, 29, and a polysilicon gate 27 are formed on a p type Si substrate 21, and SiO2 films 30, 31, a PSG film 32 are then superposed by a CVD method thereon, and heat treated. A resist mask is covered, a connecting hole 33 having fine, deep and abrupt side surface is formed by reactive ion etching on the layers 28, 29. Then, a polysilicon film 34 is accumulated by a CVD method, and the hole 33 is sufficiently buried. Subsequently, when reactive ion etched, polysilicon 35 of flared cylinder on the inner surface is formed in the hole 33. P is diffused to increase the density of the layers 35, 28, 29, and aluminum wirings 36, 27 are formed. According to this structure, the wirings without stepwise disconnection can be obtained in the vicinity of the hole without increasing the connecting hole itself. |
