| 摘要 |
PURPOSE:To densely dispose a semiconductor integrated circuit by forming an isolating region well or a channel shielding region in a semiconductor substrate in the pattern shape of triangular coordinate system, and forming a circuit element forming region by the shape of the triangular coordinate system in the surrounded region. CONSTITUTION:When a P<+> type insulation isolating region 19 is formed in a hexagonal combination shape, the collector region 19 of N type pin island surrounded by the region becomes hexagonal shape combination, a P type base 20 becomes two hexagonal interlocks, N type emitter 21 is formed in a hexagonal shape on one hexagonal shape, electrodes 23-25 become also hexagonal shape, thereby obtaining vertical N-P-N type element. In a lateral P-N-P type element, only the collector electrode 33 is formed in hexagonal combination, and the other is in hexagonal shape. Since transistors are associated in islands isolated in triangular or hexagonal combination or in hexagonal shape intimately, the electrodes may be most densely disposed in the substrate. |
