| 发明名称 |
Method of making coherent multilayer crystals |
| 摘要 |
A new material consisting of a coherent multilayer crystal of two or more elements where each layer is composed of a single element. Each layer may vary in thickness from about 2 ANGSTROM to 2500 ANGSTROM . The multilayer crystals are prepared by sputter deposition under conditions which slow the sputtered atoms to near substrate temperatures before they contact the substrate. |
| 申请公布号 |
US4430183(A) |
申请公布日期 |
1984.02.07 |
| 申请号 |
US19820424702 |
申请日期 |
1982.09.27 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY |
发明人 |
SCHULLER, IVAN K.;FALCO, CHARLES M. |
| 分类号 |
C23C14/34;C30B23/02;H01L21/203;(IPC1-7):C23C15/00 |
主分类号 |
C23C14/34 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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