| 摘要 |
PURPOSE:To provide a solder bump without displacement of melting point without melting solder bump on a depositing substrate by dividing Sn boat and a boat except Sn, filling considerable amount in alloy composition ratio, first depositing all Si, and then depositing the remaining element. CONSTITUTION:In, Bi, Sn are respectively filled at lg. 3.3g., 1.6g. in three boats, the Sn is first heated at 1,800 deg.C for 10min., then Bi is heated at 1,200 for 5min., and In is heated at 1,200 deg.C for 10min., and all are deposited to produce a solder bump. Or, 1.6g. of Si is filled in one, Bi, In are filled in the other at 3.3g. and 5.1g., the Sn is first heated at 1,800 for 10min, and then Bi, In is heated at 1,200 deg.C for 10min., all are deposited to produce a solder bump. In this manner, the Sn is initially deposited, the radiation heat in case of depositing the Sn is not applied to the existing deposited film. Then, the solder bump can be produced without the displacement in the composition of the solder bump of the melting point lower than 70 deg.C, i.e., without displacement of the melting point and without melting the solder bump on the depositing substrate. |
