| 摘要 |
PURPOSE:To obtain a high superhigh voltage in a solar battery by forming P-N junctions in insular regions which are isolated into a plurality in a chip and connecting them in series with each other. CONSTITUTION:An N type epitaxial layer 3 is divided into a plurality on a P type Si substrate 2, and a P type layer 5 is formed in the layer 3. The adjacent layer 3 and the layer 5 are sequentially connected in series by aluminum deposited wirings 6, and an SiO2 reflection preventive film is attached to the surface. According to this structure, high supervoltage can be obtained, the decrease in size can be facilitated, and it is effective in practical use as a microminiature power source. |
