| 摘要 |
PURPOSE:To raise remarkably repeatability of writing and erasion of laser light, by incorporating a specified atomic percentage of Sb in an amorphous As-S or As-S-Ge alloy. CONSTITUTION:A recording layer 2 and a protective film 3 are formed on a transparent substrate 1 to form a light recording medium. The substrate 1 is of a transparent glass plate, the layer 2 is of an amorphous chalcogenide, and the film 3 is of an SiO2 film. It is known that As2S3 has high photodarning as an amorphous chalcogenide. The amorphous chalcogenide is of an As-S or As-S-Ge amorphous alloy contg. 5-20 atomic % Sb. A preferable content of As in the As-S alloy is 20-35 atomic %, and that of S is the rest, and 20-35 atomic % As and 5-15 atomic % Ge and the rest of S are incorporated preferably in the As-S-Ge alloy. |
