| 摘要 |
PURPOSE:To form the semiconductor light-emitting element, in which a diffusion interrupting layer for obtaining an arbitrary luminous shape and the shape of a metallic electrode are combined effectively and which sufficiently satisfies its function, by arranging the metallic electrode covering a range coating the whole region of a lateral diffusion region intruding to the lower section of the diffusion interruption region of a P-N junction. CONSTITUTION:The diffusion stopping layer 3 for selective diffusion is formed onto a compound semiconductor board in which GaAsP 2 is vapor-grown on a GaAs substrate 1. The diffusion stopping layer 3 is formed while its diffusion region is reduced previously in order to prevent the extension of a light-emitting region by lateral diffusion. A diffusion layer 4 of arbitrary depth and shape is formed through thermal diffusion, and the P-N junction 5 is obtained. The metallic electrode 6 is arranged brought into contact with the upper sections of the diffusion stopping layer 3 and the diffusion layer 4. The metallic electrode 6 is determined on the basis of an aimed luminous shape and the shape of said diffusion stopping layer 3, and formed in structure in which the nose of the P-N junction of lateral diffusion does not extend to sections except a metallic electrode arranging section. When the P-N junction of the light-emitting element of such structure is conducted in the forward direction, light emitted from the P-N junction transmits through the diffusion layer, sections except a region interrupted by the metallic electrode section are confirmed visually as light-emitting sections, and the desired arbitrary luminous shape can be obtained. |
