| 摘要 |
PURPOSE:To obtain a photomask capable of forming a high precision pattern free from chromium defects, by forming a specified resist film for intercepting photoetching light on the surface of a glass substrate. CONSTITUTION:A compsn. for intercepting photoetching light is obtained by mixing 2-3wt% material, such as Congo red, for intercepting a photoetching light, such as UV rays, with a polymer compd. sensitive to electron beams, such as polymethyl methacrylate. The surface of the glass substrate 7 is coated with said compsn. to form a resist film 8 having a thickness absorbing >=95% of UV rays. This film 8 is irradiated patternwise with electron beams, and subjected to developing, water washing, hardening, and drying to form a resist film 8a having a UV rays intercepting region. As a result, the pattern edges of the resist film can be sharply formed. |
