| 摘要 |
PURPOSE:To produce efficiently an inexpensive single crystal having good quality, by holding a crucible contg. a molten raw material in this state and controlling the temp. gradient in an electric furnace so as to decrease the same. CONSTITUTION:A single crystal is grown by putting a raw material into a crucible 1, melting the same, holding the crucible 1 in an electric furnace 3 in this state, and decreasing gradually the temp. in the furnace 3. The ambinet temp. distribution of the crucible 1 in this case is set as shown in the figure. More specifically, the crucible is held in the place where the temp. is decreases at <=20 deg.C/hr.cm temp. gradient when the temp. at the top end of the crucible is gradually decreased from 1,640 deg.C, and the melt is solidifed from the foward end of the crucible 1, whereby a single crystal is grown. As a result, the crucible is held stationary without moving the same and the temp. in the electric furance is controlled in the case of growing the single crystal of an element or compd. having an extremely high m.p. by a so-called Bridgeman method, whereby the yield of single crystallization is improved and since the speed of the growth is increased, the cost of the blank material for the crystal is reduced. |
