发明名称 PLASMA ETCHING DEVICE
摘要 PURPOSE:To etch only the required surfaces of semiconductor wafers by arranging wafer holders with recessed surfaces receiving the wafers at regular intervals and supplying a reaction chamber with structure, which can be kept vacuum, with a reaction gas. CONSTITUTION:A plurality of the wafer holders 12 receiving the semiconductor wafers are arranged at regular intervals and fixed to a wafer holder supporter 11, and a holder assembly is constituted and installed in the reaction chamber 4. The reaction chamber 4 is kept vacuum by an exhaust means 5. The reaction chamber 4 is supplied with the reaction gas by a reaction-gas supply means 6 to etch the semiconductor wafers. The semiconductor wafers 1 are received in the wafer holders 12 with the recessed surfaces 10, and the wafer holders 12 are disposed at regular intervals and fixed to the wafer holder supporter 11. When the surfaces of the semiconductor wafers are etched in the reaction chamber, the backs are not etched because they are protected by the recessed surfaces of the wafer holders, and only the surfaces are etched uniformly.
申请公布号 JPS5921025(A) 申请公布日期 1984.02.02
申请号 JP19820129962 申请日期 1982.07.26
申请人 NIPPON DENKI KK 发明人 MURATA TADAHIKO
分类号 H01L21/302;H01J37/34;H01L21/3065;(IPC1-7):01L21/302 主分类号 H01L21/302
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