| 摘要 |
PURPOSE:To prevent the variation of a composition of a solution for growing an epitaxial layer in a liquid reservoir by obviating the evaporation of an easily volatile component at the time of the heating of a heater before growing the epitaxial layer and the time of the growth of the epitaxial layer and supplying the component even when the component evaporates. CONSTITUTION:A PbS substrate 19 is buried to the susceptor 11 of the device, an indentation 12 is filled with sulfur 13 as the easily volatile component of the epitaxial layer which must be formed onto the substrate, and the liquid reservoir 15 of a sliding member 17 is filled with a material 14 of Pb1-xSxSe. The growth device is inserted into a reaction pipe and heated by the heater, the material of PbS1-xSex is melted and the liquid reservoir 15 is settled on the substrate 19, and the temperature of the heater is dropped and the epitaxial layer in PbS1-x Sex is formed onto the substrate. Sulfur in the liquid reservoir 12 of the susceptor 11 evaporates during the formation of the epitaxial layer, and the vapor pressure of easily volatile sulfur is controlled to a desired value in a section covered with a shielding member 16. |
