| 发明名称 |
Measure for avoiding edge breakdowns in avalanche semiconductor diodes |
| 摘要 |
Avoidance of electrical edge breakdowns in avalanche photodiodes which are operated near the limit of breakdown, by means of an additional semi-insulating layer (6), which covers the surface and is situated electrically parallel to the diode. <IMAGE>
|
| 申请公布号 |
DE3227472(A1) |
申请公布日期 |
1984.02.02 |
| 申请号 |
DE19823227472 |
申请日期 |
1982.07.22 |
| 申请人 |
SIEMENS AG |
发明人 |
CHRISTIAN,DR.RER.NAT. SCHABER,HANS |
| 分类号 |
H01L29/06;H01L29/40;H01L31/107;(IPC1-7):H01L31/10 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
