发明名称 |
COMPOUND SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To enable to set at the desired optimum value the thickness and carrier density of a channel layer which determines the element characteristic of a Hall element, a Schottky gate FET, etc. by a method wherein a layer of high impurity density corresponding to the amount of surface charges forming surface levels is formed in the neighborhood of the surface of a III-V group compound such as GaAs. CONSTITUTION:An N type GaAs channel layer 2 is formed on a semi-insulating GaAs substrate 1 by doping an impurity such as Si or Sn by vapor growing method. The carrier density and the thickness of the channel layer are contrived to become 1X10<17>cm<-3> and 0.2mum respectively. An N type GaAs layer 4 of further higher impurity density is formed at the surface region on this N type GaAs channel layer 2. Either continuous formation or isolated formation at some intervals is available. The product (so-called nd product) of the carrier density and the thickness of this high density layer 4 is so controlled as to be coincident with the density of the surface levels of a GaAs semiconductor device. |
申请公布号 |
JPS5921073(A) |
申请公布日期 |
1984.02.02 |
申请号 |
JP19820130779 |
申请日期 |
1982.07.27 |
申请人 |
SHARP KK |
发明人 |
TOMITA KOUJI;TAKAGI JIYUNKOU;INOUE TADAAKI;KANZAKI TAKESHI |
分类号 |
H01L21/338;H01L29/80;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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