发明名称 PLANAR MAGNETRON TYPE SPUTTERING DEVICE
摘要 PURPOSE:To provide a titled device which can adjust easily magnetic flux density in accordance with the deposition rates of thin films by constituting said device wherein a yoke for fixing the magnets of a target electrode is mounted on a holding plate by means of screws and springs to make the distance between the magnet and a target material variable. CONSTITUTION:A planar magnetron type sputtering device which deposits thin films by sputtering on plural substrates 3 mounted to a rotating substrate holder 4 by using a target electrode 2 provided with magnets 11, 12 on the rear side of a target material 5 in a vacuum vessel 1 is constituted by mounting the magnets 11, 12 with a yoke 13 to a holding plate 22 of an electrode body 10 connecting said target electrode 2 to double pipes 14 for a cooling water path and for introducing a high frequency and further assembling the same adjustably in distance by means of adjustment screws 21 and springs 20, mounting the material 5 and covering the entire part with a shielding cover 15. The position of the magnets 11, 12 are thus made easily adjustable, the cooling over the entire surface thereof is made possible and the decrease in the magnetic flux density is prevented.
申请公布号 JPS5920469(A) 申请公布日期 1984.02.02
申请号 JP19820129064 申请日期 1982.07.26
申请人 HITACHI SEISAKUSHO KK 发明人 KAWAGUCHI KOUJI;MATSUMURA YASUHIDE;NAKAZAWA HIDEO;SAITOU SAKAE;ISHIOKA YOSHIO;IMAMURA YOSHINORI
分类号 C23C14/36;C23C14/35;H01J37/34;H01L21/203;H01L21/285 主分类号 C23C14/36
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