| 摘要 |
PURPOSE:To form a photo receiving semiconductor device which generates high electromotive force and has environmental high reliability by a method wherein the whole of the periphery of a substrate and a photo receiving chips in a photo receiving semiconductor device wherein the photo receiving chips are arranged, and they are molded double with photo transmitting resin is molded double with resin of different photo transmittance. CONSTITUTION:After once molding with resin not containing dye or scatterer, e.g., clear resin 6, the outer periphery thereof is further molded with the resin 7 which transmits only infrared rays to the thickness of 50-100mu. Thereby, a photo receiving semiconductor device of high photo-voltage and excellent heat and moisture resistances can be obtained. |
