| 摘要 |
PURPOSE:To obtain the improved structure of a bonding pad section in a semiconductor chip by applying and forming a pad to a polycrystalline silicon layer or an amorphous silicon layer of size approximately the same as the pad directly or through an electrically insulated layer. CONSTITUTION:The polycrystalline silicon layer 12 of 0.4mum thickness is formed under a bonding pad 1 in aluminum through the electrically insulated layer of an SiO2 layer 11 of 0.3mum thickness. Structure in which a PSG layer 13 fast stuck to the polycrystalline silicon layer, and an aluminum wiring layer 14 and an SiO2 layer 15 are laminated in succession and an N type epitaxial layer 3 is formed is formed as lower layers from the polycrystalline silicon layer. The polycrystalline silicon layer 12 is formed through a plasma CVD method, and the PSG layer 13 is formed controlled so that the concentration of phosphorus reaches 1X10<21>atom/cm<3> through a normal pressure CVD method. The bonding pad is formed in 1.0mum layer thickness, and a bonding wire 10 in a gold of a 25mumphi wire diameter is bonded with the pad 1. |
