Photovoltaic device.

摘要

A photovoltaic device comprises a transparent substrate (21), an amorphous silicon layer structure of a p-i-n type formed on the substrate (21) and comprised of a p-layer (23), i-layer (24) and n-layer (25), and an electrode (26) formed on the amorphous silicon layer structure, of the p-layer (23) and n-layer (25) of the amorphous silicon layer structure, that layer on which light is incident is such that an optical forbidden band gap is greater on the i-layer side than on the substrate side.