| 摘要 |
<p>Semiconductor device with two photodiodes, each having maximum spectral sensitivity at a different wavelength, comprises a n (or p)-type substrate, a p (or n)-type dish-shaped zone (A) adjacent to the surface of the substrate, and a n (or p)-type zone (B) entirely surrounded by zone A and the surface. The improvement is that zone B has a much lower dopant concn. than zone A. The device may be used as a dual-spectrum photodiode or phototransistor, e.g. in photocopiers, spectrophotometers, alpha-particle detectors, etc. The improvement increases the blue sensitivity of the devices (cf. US4011016).</p> |
