| 摘要 |
<p>In a non-single-crystal semiconductor PIN photoelectric structure 3 in which the light is incident on the P-type layer 4, the layer 5 is doped with a P-type impurity, such as boron, distributed so that its concentration decreases towards N-type layer 6. This ensures that the whole of the I-type layer 5 is depleted in operation and compensates for N-type doping due to oxygen, carbon or phosphorus atoms incorporated during the deposition process. The structure may be formed with the P-type layer in contact with a transparent electrode 2 on a transparent substrate 1 (as shown) or may be inverted. The non-single crystal material may be Si, SiC or Ge and may be in amorphous, semiamorphous or microcrystalline form. Amorphous Si may contain hydrogen or fluorine. <IMAGE></p> |
