| 摘要 |
PURPOSE:To eliminate a bird beak by forming an insulating film on the desired part of a silicon wafer, selectively growing a silicon crystal on the surface of the silicon except the insulating film forming region, and then partially heating the crystal forming region. CONSTITUTION:A silicon single crystal wafer 2 is oxidized in wet O2 atmosphere of 1,000 deg.C, thereby growing an SiO2 film 4 of approx. 800nm. Then, an SiO2 film is formed by photolithography only on the desired region. Then, SiCl4 gas is flowed at 800 deg.C, and silicon crystal 7 is selectively grown at approx. 700 deg.C only on the region exposed on the silicon surface 6. Then, the crystal 7 is heated partly by the light emitted from a CW argon laser. |
