| 摘要 |
PURPOSE:To prevent the corrosion of electrodes and the crack of a semiconductor chip without deteriorating electric characteristics by forming a laminate structure of a titanium layer and an alloy layer which mainly contains gold and germanium on a semiconductor chip mounting base mounting surface side. CONSTITUTION:A P type region 32 and an N type region 33 are formed on the inner surface of an N type silicon wafer 31, thereby constructing many N-P- N type transistors 34. A titanium layer 35 is deposited in a thickness of approx. 1,000Angstrom on the mounting surface of a lead frame 21 of the transistors 34. An alloy layer 36 which mainly contains gold and germanium is deposited in a thickness of approx. 1.5mum on the layer 35, and a gold layer 37 is deposited in a thickness of approx. 1,000Angstrom on the layer 36. The thus treated wafer is divided into individual chips, which are mounted on the leads 22 with the layer 36 as a solder. |
