| 发明名称 |
Process for improving nitride deposition on a semiconductor wafer |
| 摘要 |
In a process for depositing nitride on semiconductor wafers in a tube, streaks can develop on the wafers. The streaks are eliminated by using a quartz tube which has an inside surface coated with polysilicon for the nitride deposition.
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| 申请公布号 |
US4428975(A) |
申请公布日期 |
1984.01.31 |
| 申请号 |
US19830461715 |
申请日期 |
1983.01.28 |
| 申请人 |
MOTOROLA, INC. |
发明人 |
DAHM, JONATHAN C.;FRANKA, JOHN G. |
| 分类号 |
C23C16/22;C23C16/34;C23C16/44;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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