I2L Memory with nonvolatile storage

摘要

An I2L type nonvolatile memory of this invention has a structure wherein a floating gate is disposed through an insulating film on the surface of a semiconductor layer in the vicinity of a base region of an NPN transistor in an I2L. The I2L type nonvolatile memory of this invention controls current to flow through the base region of the NPN transistor of the I2L, by means of charges to be stored in the floating gate. That is, the collector output current of the NPN transistor of the I2L is modulated in dependence on the presence or absence of a channel underneath the floating gate as is generated depending on the presence or absence of charges within the floating gate and the polarity of the charges. As a result, the variation of the base current appears as an output signal at a collector terminal of the NPN transistor of the I2L, and data stored in the floating gate can be read out.