| 摘要 |
PURPOSE:To remarkably facilitate micro-miniaturization of multi-layer electrodes by forming a metal silicide layer on the self-alignment basis on the specified region of Si substrate through thermal reaction between a first metal and Si, depositing selectively a second metal layer by the chemical vapor deposition method only on such layer and then providing a third metal layer which becomes the principal wirings. CONSTITUTION:A paradium layer is deposited by the vacuum deposition on the entire part of Si substrate 11 wherein elements are provided and a paradium silicide layer 13 is formed in the specified thickness at the contact part of the substrate 11 through the thermal processing in the N2 ambient. Next, non-reacted paradium is removed by etching with an etchant consisting of mixed liquid of ammonium iodide and iodine and the periphery of layer 13 is covered with an insulating film 12. Thereafter, while the substrate is being heated up to 400 deg.C, tungsten 14 is deposited on the substrate 11 under the condition that deposition pressure is 40 Pa and deposition rate is 15nm/mm., using hydrogen and tungsten hexafluoride. At this time, tungsten 14 is not deposited on the film 12 and is adhered only on the layer 13. Next, an aluminum Al electrode wiring 15 is deposited on tungsten 14. |
