| 发明名称 |
Adhesion bond-breaking of lift-off regions on semiconductor structures |
| 摘要 |
A process is described for removing polyimide regions adhered to the surface of a semiconductor structure 10 which includes the steps of heating the structure 10 and the polyimide regions 12 to between 450 DEG and 490 DEG C., immersing the structure in a solution of one of methylene chloride and ethylene diamine/hydrazine, and ultrasonerating the solution and the semiconductor structure.
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| 申请公布号 |
US4428796(A) |
申请公布日期 |
1984.01.31 |
| 申请号 |
US19820404108 |
申请日期 |
1982.08.02 |
| 申请人 |
FAIRCHILD CAMERA AND INSTRUMENT CORPORATION |
发明人 |
MILGRAM, ALVIN |
| 分类号 |
H01L21/306;H01L21/027;H01L21/308;H01L21/311;H01L21/3205;H01L21/768;H05K3/04;(IPC1-7):B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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