| 摘要 |
PURPOSE:To reduce the ground inductance of a field effect transistor by integrally forming a source electrode lead of a beam lead type with a source electrode at both sides of an axial line for connecting a gate electrode to a drain electrode and connecting the source electrode lead to a metal seat. CONSTITUTION:A strip projection 14 to become a ground lead is integrally formed at a metal seat 13, and insulated substrates 18, 19 such as ceramic formed with metallized parts 16, 17 are bonded to the surface. An FET chip 20 which has a source electrode lead 21 of beam lead type at both sides of a line for connecting the gate electrode 1 to the drain electrode 3 is disposed at the projection 14 of the seat 13, and the lead 21 is bonded by thermal-pressing to the projection 14. A gate electrode 1 and a drain electrode 3 are connected by wire bonding to the parts 16, 17. |
