| 摘要 |
PURPOSE:To obtain a high quality epitaxial growth film under normal temperature by accommodating the component which is easily vaporized in the epitaxial layer forming material within a recess formed at a part of fine tube connected to a hermetically sealed reservior, heating it under the control, balancing a divided pressure thereof with a vapor pressure of epitaxial growth solution within the reservior and moreover providing an exhaust valve. CONSTITUTION:The Hg1-xCdxTe 16 and CdTe substrate 16 are accommodated within a reservior 11 under the support by a bar 13 and the inside is exhausted to the vacuum condition. The heaters 17, 21 are set respectively to 500 deg.C, 300 deg.C, H2 is supplied to a fine tube 18. When vapor pressure of reservoir is 1kg/cm<2>, a gas is introduced from a valve 14 and a divided pressure of Hg 20 within a recess 19 is balanced to the vapor pressure of reservoir 11 by adjusting the heater 21. Next, the solution 12 is dipped into the solution 16, temperature of heater 17 is lowered with the specified gradient. Thereby, an epitaxial layer of Hg1-xCdxTe is provided on the substrate and then substrate is lifted after the specified period. The space 23 in the reservoir 11 is saturated by the Hg vapor and high pressure is no longer necessary for preventing evaporation from the matrial 16. Moreover, unwanted material 16 falls by its own weight while it is lifted and thereby a high quality epitaxial layer can be obtained without surface damage, unlike the sliding method. |
