| 摘要 |
PURPOSE:To form a thin film of single crystal free from the occurrence of crack, by setting amorphous insulating film having an opening on a base of single crystal, irradiating it with an ionized given substance through the opening so that it is crystallized. CONSTITUTION:When Si is used as a base for a semiconductor of single crystal, the amorphous insulating material layer 7 such as SiO2, Al2O3, SiN4, etc. resisting to at least 1,100 deg.C high temperature, having the opening 8, is formed on the surface of the Si base 6. It is irradiated with Si particles by crystal growth method of thin film using ionic beam. In the operation, the temperature of the base 6 is kept at about 600-1,100 deg.C. The Si particles having reached the space above the base 6 are passed through the opening 8, attached preferentially to the base 6, the growth of single crystal starts from the surface of the base 6 in the opening 8 by migration effect. After the opening 8 is embedded, the thin film 9 of Si single crystal is grown gradually on the amorphous insulating material layer 7. Consequently, the thin film 9 of single crystal having extremely low existence of transition free from the occurrence of crack is obtained. |
