| 摘要 |
PURPOSE:To form an extremely uniform GaAs epitaxial layer of an excellent external appearance of the surface by a method wherein a substrate for growing a crystal is set up to a substrate holder fitted while a shaft is displaced from the center of a reaction pipe, which is inclined slightly horizontalwise and the substrate holder is turned and the crystal is grown. CONSTITUTION:The substrate for growing the crystal is fitted to a pan-shaped holding section vertically set up at the nose of the shaft, and an electric furnace 17 is inclined at approximately ten-odd degrees from several degrees from horizontality while the exhaust port 18 side is directed downward in order to prevent falling by revolution. The substrate can be turned on crystal growth without depending upon a special holding means such as a hold-down only by slightly inclining it because the substrate for growing the crystal is thin, flat and light, and the inequality of the holding section and the generation of cracks, breakings, etc. can be prevented. When the shaft of the substrate holder is displaced downward from the center, the flow of a gas is biassed upward, and the velocity of formation of a film at a static position and concentration change in the upper and lower sections of the substrate, but these velocity and concentration are made equal by revolution, and the thickness of a growth layer and concentration are uniformly formed substantially. |
