| 摘要 |
PURPOSE:To offer the semiconductor device excluded with conduction noise, avalanche noise and moreover, easy to manufacture by a method wherein the device is constructed of semiconductor pellets of the plural sheets having P-N junctions and to perform high-frequency action and laminated between a pair of electrodes arranging the rectifying directions thereof, and a high resistor consisting of a semiconductor interposed between the electrodes adjoining to the cathode side thereof. CONSTITUTION:Depletion layers are formed though a little in P-N junctions of the respective silicon pellets 4a-4n to make junction capacitances to exist, and when a voltage is applied, and junction capacitances are charged to reach conduction, a time constant expressed by the product of junction capacitance and resistance is enlarged because of interposition of the high resistor 6, and forward recovery time is elongated. Accordingly, the current rise rate di/dt at forward recovery time is reduced, a counter electromotive voltage is reduced, and conduction noise is not generated. Moreover, when a reversely directional voltage is applied, the avalanches are generated locally in the silicon pellets 4a-4n on the anode side because of ununiformity of the alloted voltage rate, and even when pulse noise is generated, because the peak value thereof is limited by the high resistor 6, it is not transmitted to a Braun tube as avalanche noise. |
