| 摘要 |
PURPOSE:To equalize the temperature distribution of the semiconductor wafer, and to reduce the generation of a crystal defect by separately controlling the temperature of the peripheral section of the wafer which is liable to be largely affected by thermal environmental conditions. CONSTITUTION:The wafer 8 is set at a predetermined position by a wafer carrier jig, and shutters 5, 6 are opened simultaneously. A lamp is lit previously, and brought to a stationary state, and the light of approximately 20W/cm<2> by main heating lamp aggregates 1 and further the light of approximately 2W/cm<2> by auxiliary heating lamp aggregates 2 are irradiated to a susceptor 9 first in the peripheral section of the wafer. The luminous intensity of the lamp aggregates 1, 2 is controlled through a lamp power supply control system 13 so that the temperature Tc of the central section of the wafer monitored by thermometers 11, 12 and the temperature Tp of the peripheral section are kept within an allowable range, the temperature of the central section of the wafer is brought to a predetermined heat treatment valve, and a fixed time is made to pass at the temperature, the shutters 5 are closed, and the wafer is cooled. |
