| 摘要 |
PURPOSE:To reduce the light leakage of a semiconductor device by a method wherein the intrinsically gettering treatment is performed to a semiconductor substrate when a display or photo acceptance element is to be formed on the semiconductor substrate. CONSTITUTION:The existing IG treatment is performed to the N type Si single crystal substrate to form a defect layer (m) and a no defect layer (l). Then a P<+> type layer {a stopper (e)} is formed according to the existing thermal diffusion method. Moreover a gate material (f) is formed, N<+> type layers {a source (g) and a drain (h)} are formed according to the thermal diffusion method, and finally a screen plate (k) is put thereon to complete formation of the display element. Accordingly, the defect layer (m) is formed at the distance of about 2mum from the directly under part of the drain (h). |
