| 摘要 |
PURPOSE:To intensify the soft-error resisting property as well as to improve bistable property of the memory cell for the titled semiconductor memory by a method wherein a pair of driving MOS transistors are composed of drain regions which are adjoiningly positioned facing each other, a gate electrode, and a source region which is arranged in such a manner that it is surrounding three sides of a drain region and a gate electrode region in the state wherein they are formed in one body. CONSTITUTION:Drain regions 292, 293 and 296 of MOS TR for a pair of drivers and Q1, Q2 are arranged adjoiningly facing one another, and the source region 291 of the above is arranged in such a manner that it is surrounding continuously the three directions of said drain region and gate electrodes 24 and 25. As there is a balancing property in the way of having the effect of alpha rays or the minority carrier generated on the circumferential circuits, an excellent holding strength of the memory cell data can be obtained. As no change is made in mask-matching deviation on the conductance (gm) of the MOS TR for a pair of drivers and gate capacitance in unchanged, the holding strength of the memory cell data can be maintained in an excellent state. |
