| 摘要 |
PURPOSE:To prevent the damage of gate insulating film as well as to manufacture TET arrays with an excellent yield rate by a method wherein the gate electrode of an insulating gate field-effect thin film transistor is composed of the first and second electrodes, a source electrode is composed of the third and fifth electrodes and a drain or a source electrode is composed of the fourth and fifth electrodes. CONSTITUTION:Electrodes 2, 3 and 4 are selectively formed using the Cr thin film which is vapor-deposited on a main surface of a glass substrate 1. A silicon oxide film as an insulating film 5 and an a-Si film as a semiconductor thin film 6 are deposited successively using a plasma CVD method. Subsequently, Al is vapor-deposited, and electrodes 7, 8, 9, 10 and 11, which will be turned to the source or the drain, are selectively formed. If protective transistors Tr2 and Tr3 are connected in three stages, a signal transistor Tr1 can be driven sufficiently to the level of a saturated current, and also the input impedance of the gate circuit above the gate voltage with which a saturated current will be given is reduced suddenly. Thus the number of connections of the protective transistors is increased or decreased as occasion demands. |
