| 摘要 |
PURPOSE:To minimize the area and thus obtain a semiconductor a resistor of excellent specific accuracy by a method wherein the mutual connection between the first and second resistor groups is performed at the aperture of the surface insulation film of the first crystalline resistor group at the part wherein the first polycrystalline resistor group and the second one intersect with each other. CONSTITUTION:An oxide film 6 is formed on an Si substrate 7 by thermal oxidation, etc. Next, the first crystalline Si is formed on the oxide film 6 and patterned by using photoetching technique, etc., and then impurity diffusion and oxidation are performed. The oxide film on this first polycrystalline Si is removed by using photoetching technique. After forming an oxide film removed part 5, the second polycrystalline Si is formed over the entire surface and patterned by using photoetching technique, and then impurity diffusion and oxidation are performed. Thereafter, a contact 2 is opened in the process of contact, and a metallic wiring is formed. The interval to prevent the short circuit due to whisker, etc. of the polycrystalline Si at the time of forming the polycrystalline Si by using photoetching technique, etc. is unnecessitated. |
