| 摘要 |
PURPOSE:To enable to form a protection film which has good quality and uniform film thickness by a method wherein gas of forming a protection film is irradiated with electrons of high energy, while this gas is supplied in clean atmosphere under high vacuum, and accordingly the electrons are led to a semiconductor wafer as gas molecular beams, resulting in the formation of the protection film. CONSTITUTION:A rotary substrate holder 11 is provided at the center of a molecular beam protection film forming device 10, and, after placing here the semiconductor wafer 12 whereon the protection film is to be formed, the inside of the molecular beam protection film forming device 10 is made high-vacuous by closing a gate valve 18. When an evaporation source boat 13 is kept filled with substance necessary to form the protection film, gas generates by evaporation. After it is confirmed by an ion gauge 17 that the vacuum degree increases sufficiently, the semiconductor wafer 12 is heated by throwing a substrate heater power source which is not illustrated, and thus the substrate holder 11 is rotated. Thereafter, when a cell shutter 14 and a substrate shutter 15 are opened, gas flows from the evaporation source boat 13 toward the semiconductor wafer 12 supported by the substrate holder 11. The emission of electrons of high energy from a HEED (High Energy Electron Diffuser) gun 16 foward the gas with the semiconductor holder as the cathode causes deposition of the semiconductor wafer in molecular state. |
