| 摘要 |
PURPOSE:To obtain the MIS type blue color light emitting element comprising ZnSe with high efficiency at low voltage by a method wherein the first ZnSe layer and the second N type ZnSe layer with the carrier concentration lower than that of the first ZnSe layer are laminated on a substrate. CONSTITUTION:The first N type ZnSe layer 12 with carrier concentration of 5X10<17>/cm<3> and the second N type ZnSe layer 13 with carrier concentration of 5X10<16>/cm<3> are laminated on N type GaAs substrate 11 by means of the molecular beam epitaxial process while an insulating layer 14 comprising SiO2 and a metallic layer 15 are formed on the layer 13. The inlet emitted from the second ZnSe layer 13 will not be absorbed into the substrate 11 since the second ZnSe layer 13 with high resistance emitting blue color light is formed very thin with thickness of 5,000Angstrom and the first ZnSe layer 12 with thickness of 14mum and the same band gap as that of the second layer 13 is arranged between the substrate 11 and the second layer 13. The resistance of the overall elements may be minimized since the resistance of the first ZnSe layer 12 is much lower than that of the second ZnSe layer 13. |
