| 摘要 |
PURPOSE:To improve the correction accuracy by reducing the time of correcting deflection strains in a charge beam exposure device by a method wherein a method wherein a method of detecting each mark of the group of standard marks is used in the state that a formula for correcting configuration strains is introduced, and a sample transfer stage is stopped. CONSTITUTION:The deviation between the mark configuration which has been measure and the mark configuration at present is measured. In other word, an electron beam is focused on the level surface of the same height as the lower group of standard marks, marks 1-5 are selected for representative marks out of the marks 9X9, only the representative marks are transferred respectively to immediately under the deflection center by means of the stage, and then the formula for correcting mark configuration strains is determined from the mark detection value due to the stage position measured by a laser measuring machine and a beam deflection system. X1M=XM+P11XM+P12YM+ P13(XMYM)P14, Y1M=YM+Q11XM+Q12YM+Q13 (XMYM)Q14, (XM, YM) represents the posi tion of mark configuration which has been measured, and the origin of the coordinates is made to agree with the center of the mark 1. (X1M, Y1M) represents the position of mark configuration at present, and the origin of this coordinates is also made to agree with the conter of the mark 1. P1i, Q1i (i=1-4) represent the coefficient of configuration strain. |
