| 摘要 |
PURPOSE:To obtain the highly efficient semiconductor element having an arbitrary shape and area at low cost by a method wherein a conductive film is formed on the semiconductor or a semi-metallic film of a single or more layers which are formed in such a manner that it is bridged on a plurality of electrode pairs formed on an insulating substrate. CONSTITUTION:After a transparent electrode 2 containing In2O3 and an Ni/ Cr electrode 3 are formed on a glass substrate 1 in such a manner that they are positioned facing each other, a CdTe film 4 and an Sn electrode 5 are formed on the above successively by performing a vapor-deposition method. In case of the equivalent circuit diagram when said semiconductor element is applied to an image sensor, 7-1-7-n in the diagram indicate photosensitive element arrays and 8-1-8-n indicate reverse-current preventing diode arrays. Also, 9 indicates row electrode terminals, and 10 indicates column electrode terminals. The image sensor thus obtained has the high sensitivity effective in wavelength range of 350- 850nm, and the frequency responsiveness of a picture element is high at 10<3>kHz. Accordingly, an object can be directly read out at a high speed, thereby enabling to make the device smaller in size and to cut down the cost. |
