Thin layer transistor and liquid crystal display device using this transistor.

摘要

The invention relates to liquid crystal display devices. A thin layer MOS transistor intended for use in a liquid crystal display panel has a structure in which a transparent electrode 410 of a material such as indium-tin oxide passes through a gate insulation layer 403 so as to come directly into contact with a drain or source region 405. The direct contact between the drain region and the transparent electrode makes it possible to obtain excellent contact characteristics, thus improving the quality of the display. Application to display panels of the type with matrix of active elements.