| 摘要 |
PURPOSE:To enable to form a magnetic film on a substrate by performing sputtering at a low temperature and a high speed by a method wherein sputtering is performed, while a magnetic field is given in parallel to a target surface by a magnet in the neighborhood of the groove part of the target, resulting in the formation of the magnetic film on the surface of the substrate which is arranged in opposition to the target. CONSTITUTION:The inside of the device is made low-vacuous, and argon gas is introduced and kept at a fixed inner pressure. On the other hand, when the magnetic field over the value of magnetic saturation of the target 1 is given by the magnet 2, the magnetic field due to lines of magnetic force 14 parallel to the target 1 is formed in the neighborhood of the surface of the target 1, as shown by the broken lines. In magnetron type sputtering, the effect of sputtering at a low temperature and a high speed is not actually exhibited unless the vacuum degree is 1X10<-2>Torr or less, therefore 100 gauss or more is necessary for the strength of the magnetic field which is formed on the surface of the target 1 to the lowermost limit. It is necessary to increase the strength of the magnetic field much more as the vacuum degree becomes lower, but the strength of the formed magnetic field is adjusted by giving the magnetic field over the value of magnetic saturation from the viewpoint of the thickness or the shape of the target 1. |
