| 摘要 |
1526631 Semiconductor lasers HITACHI Ltd 11 Jan 1977 [12 Jan 1976] 00993/77 Heading H1C In a semiconductor laser having an active layer 4 sandwiched between a P-layer 5 and an N-layer 3 either the P-layer or the N-layer is of stripe mesa form having a base whose thickness lies between 0À8 and 1À5 Ám. |
