| 摘要 |
1526695 Liquid phase epitaxy WESTERN ELECTRIC CO INC 7 April 1977 [13 April 1976] 14740/77 Heading B1S [Also in Division H1] A semiconductor opto-electronic device comprises a substrate 35 bearing a crystalline layer 34 of a solid solution of Ga including at least As, Sb and P, and having a graded lattice constant and bandgap. The grading is achieved by initially depleting a critical amount of P in a growth solution. The device is suitable for use in a Schottky barrier diode as shown, LEDs, PN junction photodiodes and double hetero-structure lasers. A method of forming a laser by LPE is described in detail and includes depositing the various doped layers from corresponding melts contained in wells in a multi-well graphite boat, by lowering the temperature of the melts. A slider containing the substrate slides under the boat from one well to another so that the layers are formed successively on it. The substrate may be GaAs, a metal or an insulator. The semiconductor layers are doped with In, Sn, Ge, Zn, Te, and contact metals are Pd, Pt, Sn, Ni, Au, Cr.
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