| 摘要 |
PURPOSE:To obtain large current by reflecting incident light in multiple by forming by etching rough surface by electrochemically or chemically or in combination of both on the surface of a metal material and forming an amorphous silicon layer and further a transparent electrode layer. CONSTITUTION:The surface of a high purity aluminum metal substrate 11 is cleaned, dipped in mixture aqueous acid solution of sulfuric acid and hydrochloric acid to raise the temperature of solution to 80 deg.C, and a DC etching is performed with the substrate 11 as a positive side and a carbon electrode opposed to the substrate as a negative side. After the substrate 11 is sufficiently washed with water, it is chemically etched in mixture acid of phosphoric acid and sulfuric acid, thereby forming ultrafine irregularity on the surface. Thereafter, a metal layer 16 formed of Mo, amorphous Si layers 12-14 of P type, I type and N type, In2O3-SnO2 transparent electrode layer 15 are laminated and coated along the roughed surface. In this manner, the light 17 which is incident to the electrode 15 is collected by the roughened surface, reflected in the cavity in multiple in a repeated manner, and solar light of wavelength range useful for the photoelectric conversion is efficiently fed to the Si layer. |
