| 摘要 |
PURPOSE:To obtain a transparent electrode which is substantially transparent, with low resistance, and with its electrode resistance being reduced to 3OMEGA/? or lower by patterning a transparent electrode with a resistance of some 100OMEGA/? then forming a nontransparent portion with low resistance by plating on the edge portion of said transparent electrode. CONSTITUTION:A transparent conductive film 2 with a resistance of some 100OMEGA/? and a cater-paste layer 3 with excellent adhesion to a plated layer and on which metals such as Cu, Ni, Au, etc. can be deposited and formed by non-electric field plating after sintering are formed in sequence on a glass substrate 1, and a resist pattern 4 is formed on it. Next, etching is performed using the resist pattern 4 as a mask, and after patterning the cater-paste layer 3 and transparent conductive film 2, a low-resistance metal electrode (low resistance portion) 5 is formed by plating on the side surface of the cater-paste with the resist pattern 4 kept attached. A low-resistance metal electrode 5 is formed on the electrode edge portion of the electrode thus formed, thereby it can be easily formed into an electrode width of 150mum, a length of 15cm, and an resistance of 300OMEGA or less, which is substantially equivalent to the use of a transparent electrode with a resistance of 0.3OMEGA/? or less. |
