| 摘要 |
PURPOSE:To obtain a monolithic device adapted for mass production of a capacitor and an FET by providing an operation layer and the capacitor on one conductive type semiconductor substrate surface, attaching a drain electrode and a gate electrode onto the layer, and connecting it to one electrode of the capacitor. CONSTITUTION:An N type epitaxial layer is formed on a semi-insulating GaAs substrate 1, and mesa etched to form an N type operation layer 2. Then, a source electrode 3 and a drain electrode 4 are provided by the ohmic electrode material of Au+Ge-Ni, the interval of both electrodes is set to approx. 3mum, the electrode 3 is extended to the surface of the substrate 1 as the electrode of the capacity. A thin TiO2 film 6 is accumulated by selectively sputtering, thereby forming Au/Ti opposed electrode 7. An SiO2 film 12 is covered by sputtering method, a window 13 is opened, the N type layer 2 is etched, a pinch-off voltage is adjusted, an aluminum gate electrode 5 is attached to complete it. According to this structure, the inductance component of the connecting part between the source electrode and the capacity can be reduced extremely, thereby improving the reproducibility of the characteristic of the device, and reducing the assembling cost. |
